Simulation and modeling-new macro model for Zeners

Author

Pawlikiewicz, A.H.

Author_Institution

ASIC Technol. Group, Ford Motor Co., Dearborn, MI, USA

Volume

9

Issue

2

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

7

Lastpage

11

Abstract

A macro model of the 6.2-V 1N5920B Zener diode which very accurately represents the measured characteristics both in the DC and AC domain is presented. For users who do not have access to optimization software, the model can still be easily customised for other Zener diodes by replacing the emission coefficients (N), saturation currents (Is) and series resistance (Rs) under forward and reverse bias. One would also need to modify the temperature coefficient and measure the capacitance (CIO) at V/sub d/=0 V bias, to have a functional model of the Zener diode. However, there is no easy technique to extract the TT parameter without going through an extraction process. Therefore, without modification to the T1 parameter, one has to be careful when using the customized model for switching applications.<>

Keywords

Zener diodes; electric breakdown of solids; semiconductor device models; simulation; 1N5920B; 6.2 V; AC domain; DC domain; Zener diode; capacitance; emission coefficients; forward bias; macro model; parameter extraction; reverse bias; saturation currents; series resistance; temperature coefficient; Analytical models; Breakdown voltage; Circuit simulation; Diodes; Electric breakdown; Integrated circuit modeling; Resistors; Temperature control; Temperature dependence; Voltage control;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.200846

Filename

200846