DocumentCode :
868048
Title :
Improved performance of GaAs
1-x
P
x
laser diodes
Author :
Tietjen, J.J. ; Ochs, S.A.
Volume :
53
Issue :
2
fYear :
1965
Firstpage :
180
Lastpage :
181
Keywords :
Chemical analysis; Current density; Diode lasers; Fabrication; Gallium arsenide; Photodiodes; Signal to noise ratio; Silicon; Substrates; Threshold current;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3607
Filename :
1445537
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=868048
