Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

Author

Shin, Changhwan ; Sun, Xin ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA

Volume

56

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

1538

Lastpage

1542

Abstract

A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (V_th) lowering and variation. RDF effects are found to be caused primarily by body RDF. The trigate bulk MOSFET offers a new method of V_TH adjustment, via tuning of the retrograde body doping depth, to mitigate tradeoffs in V_TH variation and short-channel effect control.

Keywords

MOSFET; doping profiles; fluctuations; semiconductor device models; semiconductor doping; RDF effect; atomistic 3D device simulation; planar bulk MOSFET; random-dopant-fluctuation; retrograde body doping depth; short-channel effect control; size 20 nm; source-drain doping profile; threshold voltage; trigate bulk MOSFET; CMOS technology; Design optimization; Doping profiles; Electrostatics; FETs; Fluctuations; MOSFET circuits; Resource description framework; Silicon; Sun; Threshold voltage; Multigate FET; random-dopant fluctuations (RDFs); variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2020321

Filename

4926198