Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding

Author

Green, R.P. ; Wilson, L.R. ; Carder, D.A. ; Cockburn, J.W. ; Hopkinson, M. ; Steer, M.J. ; Airey, R.J. ; Hill, G.

Author_Institution

Dept. of Phys. & Astron., Univ. of Sheffield, UK

Volume

38

Issue

24

fYear

2002

fDate

11/21/2002 12:00:00 AM

Firstpage

1539

Lastpage

1541

Abstract

A GaAs-based quantum cascade laser utilising lattice matched Ga_0.51In_0.49P waveguide cladding is reported, Room temperature operation at a wavelength λ ≃ 9.8 μm has been demonstrated, with threshold current densities ∼6 kAcm^-2 at 12 K rising to ∼37 kAcm^-2 at room temperature. A characteristic temperature T₀ ∼ 105 K was obtained between 210 and 305 K. It is predicted that optimised GaInP waveguides can offer significantly lower loss than those based on either GaAs or AlGaAs.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; optical losses; quantum cascade lasers; waveguide lasers; 12 to 305 K; 9.8 micron; Al_0.45Ga_0.55As barrier; Ga_0.51In_0.49P; GaAs-Al_0.45Ga_0.55As; characteristic temperature; lattice matched GaInP waveguide cladding; optimised GaInP waveguides; room temperature GaAs-based quantum cascade laser; room temperature operation; threshold current densities; waveguide loss;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20021080

Filename

1106103