Title :
Comparison of three simple field-effect-transistor models
Author_Institution :
Associated Semiconductor Manufacturers Ltd., Wembley Laboratories, Hirst Research Centre, Wembley, UK
fDate :
4/1/1966 12:00:00 AM
Abstract :
The electrical characteristics of junction-gate field-effect transistors with a uniform, linear and parabolic distribution of impurities in the channel region are compared. The uniform distribution corresponds to an alloyed p-n junction gate, while the other two are approximations to a diffused-junction gate.
Keywords :
semiconductor junctions; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660119
