Title :
SiO2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate
Author :
Yeh, Rong-Hwei ; Lin, Cha-Shin ; Liu, Wen-Hsiung ; Hong, Jyh-Wong
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
11/21/2002 12:00:00 AM
Abstract :
SiO2-isolated Si-based n-a(amorphous)-Si:H/i-a-SiC:H/p-a-Si:H thin-film LEDs (TFLEDs) with n-a-Si/n-type crystalline silicon (c-Si) hetero-interface have been proposed and fabricated successfully on an n/n+ c-Si wafer. The obtained TFLEDs revealed a brightness of 855 cd/m2 at an injection current density of 0.49 A/cm2 and a broad electroluminescence intensity with a flat-top wavelength ranging from 600 to 690 nm and a FWHM=205 nm at an applied voltage of 15 V. Experimental results demonstrated the feasibility of developing Si-based visible light-emitting devices on c-Si substrate.
Keywords :
amorphous semiconductors; brightness; current density; elemental semiconductors; hydrogen; light emitting diodes; semiconductor materials; silicon compounds; wide band gap semiconductors; 15 V; 600 to 690 nm; Si:H-SiC:H-Si:H; TFLEDs; brightness; electroluminescence intensity; flat-top wavelength; injection current density; n-a-Si:H/i-a-SiC:H/p-a-Si:H; visible amorphous thin-film LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021028
