DocumentCode
868996
Title
M.O.S. transistor as a 4-terminal device
Author
Cobbold, R.S.C.
Author_Institution
University of Saskatchewan, Department of Electrical Engineering, Saskatoon, Canada
Volume
2
Issue
6
fYear
1966
fDate
6/1/1966 12:00:00 AM
Firstpage
189
Lastpage
190
Abstract
Taking account of the bulk charge and a finite substrate-source e.m.f., expressions are derived for the substrate and gate transconductances of a metal-oxide-semiconductor (m.o.s.) transistor. Comparison with experimental results indicates some discrepancies, but these appear to be no greater than would be expected of a first-order theory. A brief discussion of the factors affecting the substrate transconductance is given.
Keywords
transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19660159
Filename
4206798
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