• DocumentCode
    869008
  • Title

    Temperature effects in m.o.s. transistors

  • Author

    Cobbold, Richard S. C.

  • Author_Institution
    University of Saskatchewan, Department of Electrical Engineering, Saskatoon, Canada
  • Volume
    2
  • Issue
    6
  • fYear
    1966
  • fDate
    6/1/1966 12:00:00 AM
  • Firstpage
    190
  • Lastpage
    191
  • Abstract
    The effects of temperature on m.o.s. transistors, operated in the pinchoff mode under constant-current conditions, are examined. A theoretical derivation, which accounts for interface and substrate conditions, is presented for the temperature coefficient of the gate-source voltage. Experimental measurements on both n- and pchannel silicon m.o.s. transistors are compared with theory.
  • Keywords
    transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19660160
  • Filename
    4206806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=869008