DocumentCode

869009

Title

Radiation experiment provides new information concerning defects on silicon surfaces

Author

Bostian, C.W. ; Manning, E.G.

Volume

53

Issue

3

fYear

1965

fDate

3/1/1965 12:00:00 AM

Firstpage

305

Lastpage

306

Keywords

Active noise reduction; Bonding; Degradation; Electrons; Germanium; Lattices; Noise level; Semiconductor device noise; Silicon; Surface structures;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1965.3699

Filename

1445629