DocumentCode
869093
Title
Use of transient measurements in metal-insulator-semiconductor structures to determine semiconductor doping densities
Author
Waxman, A.
Volume
53
Issue
3
fYear
1965
fDate
3/1/1965 12:00:00 AM
Firstpage
309
Lastpage
310
Keywords
Argon; Bridge circuits; Bridges; Density measurement; Insulation; Metal-insulator structures; Microwave measurements; Microwave radiometry; Semiconductor device doping; Xenon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1965.3706
Filename
1445636
Link To Document