Title :
Study of secondary breakdown in transistors
Author :
Novo, D.Domingues ; Corazza, M.
Author_Institution :
Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
fDate :
6/1/1966 12:00:00 AM
Abstract :
As a first step in the discussion on theories of secondary breakdown, an experimental setup to test transistors is described. Its essential characteristic is the application of constant collector current and power, with the possibility of applying any desired collector-current waveform. A safety circuit protects transistors from destruction during the tests and enables many tests with the same sample.
Keywords :
electric breakdown; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660184