DocumentCode :
869167
Title :
Study of secondary breakdown in transistors
Author :
Novo, D.Domingues ; Corazza, M.
Author_Institution :
Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
Volume :
2
Issue :
6
fYear :
1966
fDate :
6/1/1966 12:00:00 AM
Firstpage :
217
Lastpage :
218
Abstract :
As a first step in the discussion on theories of secondary breakdown, an experimental setup to test transistors is described. Its essential characteristic is the application of constant collector current and power, with the possibility of applying any desired collector-current waveform. A safety circuit protects transistors from destruction during the tests and enables many tests with the same sample.
Keywords :
electric breakdown; transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19660184
Filename :
4206856
Link To Document :
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