DocumentCode :
869186
Title :
The germanium insulated-gate field-effect transistor (FET)
Author :
Chang, L.L. ; Yu, H.N.
Volume :
53
Issue :
3
fYear :
1965
fDate :
3/1/1965 12:00:00 AM
Firstpage :
316
Lastpage :
317
Keywords :
Dielectrics and electrical insulation; Diode lasers; Equations; FETs; Germanium; Optical reflection; Oscillators; Polarization; Reflectivity; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3715
Filename :
1445645
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=869186
