Title :
Burst noise of silicon planar transistors
Author :
Giralt, G. ; Martin, J.C. ; Mateu-Perez, F.X.
Author_Institution :
Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
fDate :
6/1/1966 12:00:00 AM
Abstract :
An important random phenomenon has been observed on low-level silicon planar transistors which has the aspect of a low-frequency squarewave of constant magnitude and random frequency. The step magnitude depends on temperature and biasing current; their probability of duration may be approached by a random Poisson process.
Keywords :
noise; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660194
