Title :
III-V Heterostructure Nanowire Tunnel FETs
Author :
Lind, Erik ; Memisevic, Elvedin ; Dey, Anil W. ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; indium compounds; nanowires; semiconductor device models; tunnel transistors; 2-band 1-D analytic tunneling model; III-V heterostructure nanowire tunnel FET; InAs-GaSb; field-effect transistors; staggered source-channel band alignment; Logic gates; Nanoscale devices; Photonic band gap; Silicon; Substrates; Temperature measurement; Tunneling; GaSb; III-V; InAs; Tunnel field effect transistors (TFET); broken gap;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2388811
