DocumentCode :
86955
Title :
A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a 
BiCMOS SiGe:C Technology
Author :
Awny, Ahmed ; Nagulapalli, Rajasekhar ; Winzer, Georg ; Kroh, Marcel ; Micusik, Daniel ; Lischke, Stefan ; Knoll, Dieter ; Fischer, Gunter ; Kissinger, Dietmar ; Ulusoy, Ahmet Cagri ; Zimmermann, Lars
Author_Institution :
IHP, Frankfurt (Oder), Germany
Volume :
25
Issue :
7
fYear :
2015
fDate :
Jul-15
Firstpage :
469
Lastpage :
471
Abstract :
This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of -3 dBm average optical input power with BER of 2.5×10-11. It operates at λ = 1.55 μm wavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW of power, provides maximum differential output amplitude of 500 mVpp, and occupies an area of 3.2 mm2. The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.
Keywords :
Ge-Si alloys; carbon; elemental semiconductors; integrated optics; optical receivers; silicon; BiCMOS technology; O/E bandwidth; Si; SiGe:C; TIA; bit rate 40 Gbit/s; frequency 31 GHz; germanium photodiode; linear transimpedance amplifier; measured optical-electrical bandwidth; monolithically integrated silicon linear photonic receiver; power 275 mW; size 0.25 mum; voltage 3.3 V; voltage 3.7 V; wavelength 1.55 mum; Adaptive optics; BiCMOS integrated circuits; Current measurement; Optical receivers; Optical variables measurement; Photonics; Integrated photonics; SiGe; transimpedance amplifier;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2015.2430615
Filename :
7116615
Link To Document :
