Characteristics of high-T/sub c/ superconducting flux flow transistors with submicron channels

Author

Miyahara, K. ; Tsuru, K. ; Kubo, S. ; Suzuki, M.

Author_Institution

NTT Interdisciplinary Res. Labs., Tokai, Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

3381

Lastpage

3384

Abstract

High-T/sub c/ superconducting flux flow transistors were fabricated by focused ion-beam irradiation with thin films of co-evaporated YBaCuO. The line-shaped vortex flow channels (0.8 /spl mu/m in width) were constructed by scanning a focused Ga ion-beam (500 nm in diameter) to reduce the critical super-current of the film. The three terminal characteristics of the device were successfully measured. The flux flow characteristics and the transresistance of the submicron channel were measured and compared with those of an ordinary device with a channel wider than 2 /spl mu/m. The measured flow voltage, transresistance and current gain are discussed in relation to the parallel flow of the vortices in the wide channel.<>

Keywords

barium compounds; electron device manufacture; flux flow; focused ion beam technology; high-temperature superconductors; superconducting transistors; yttrium compounds; 0.8 micron; Ga; YBaCuO; co-evaporated thin films; critical super-current; current gain; fabrication; flow voltage; focused ion-beam irradiation; high-T/sub c/ superconducting flux flow transistors; line-shaped vortex flow channels; submicron channels; three terminal characteristics; transresistance; Chemicals; Current measurement; Etching; Fabrication; Fluid flow measurement; Gain measurement; Reproducibility of results; SQUIDs; Superconducting films; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403317

Filename

403317