DocumentCode
869626
Title
S-type negative-resistance and switching phenomena in insulating films
Author
Argall, F.
Author_Institution
Chelsea College of Science and Technology, Department of Physics, London, UK
Volume
2
Issue
7
fYear
1966
fDate
7/1/1966 12:00:00 AM
Firstpage
282
Lastpage
283
Abstract
An S-type negative-resistance region in the current/voltage characteristics of thin films of silicon oxide and aluminium oxide is reported. Radio-frequency current oscillations associated with this region were observed. Related to this S-type negative resistance was a switching phenomenon, whereby the film could be switched from an insulating to a conducting state, and vice versa, by the application of suitable pulses. This could be done repetitively in most samples without any change in their dielectric properties.
Keywords
aluminium compounds; conductors (electric); dielectric properties; electric resistance; films; insulating materials; oscillations; semiconductors; silicon compounds;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19660238
Filename
4206961
Link To Document