DocumentCode :
869657
Title :
Lead salt epitaxial films with near bulk properties
Author :
Bylander, E.G.
Volume :
53
Issue :
4
fYear :
1965
fDate :
4/1/1965 12:00:00 AM
Firstpage :
395
Lastpage :
396
Keywords :
Circuits; Crystalline materials; Low-frequency noise; MONOS devices; Molecular beam epitaxial growth; Noise measurement; Semiconductor device noise; Semiconductor films; Substrates; Thin film transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3760
Filename :
1445690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=869657
