• DocumentCode
    869657
  • Title

    Lead salt epitaxial films with near bulk properties

  • Author

    Bylander, E.G.

  • Volume
    53
  • Issue
    4
  • fYear
    1965
  • fDate
    4/1/1965 12:00:00 AM
  • Firstpage
    395
  • Lastpage
    396
  • Keywords
    Circuits; Crystalline materials; Low-frequency noise; MONOS devices; Molecular beam epitaxial growth; Noise measurement; Semiconductor device noise; Semiconductor films; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1965.3760
  • Filename
    1445690