DocumentCode
869819
Title
Millimetre-wave planar oscillator on semi-insulating GaAs substrate
Author
Freyer, J. ; Guttich, U. ; Wenger, J. ; Zhang, X.
Author_Institution
Tech. Univ., Munchen, West Germany
Volume
136
Issue
2
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
84
Lastpage
86
Abstract
Design and fabrication of V-band stripline oscillators for pulsed and CW IMPATT diodes on semi-insulating GaAs substrates are described. Maximum output power of 125 mW at 53 GHz and 80 mW at 70 GHz, with an efficiency up to 3%, could be realised for Si and GaAs CW devices, respectively.
Keywords
III-V semiconductors; IMPATT diodes; elemental semiconductors; gallium arsenide; microwave oscillators; silicon; solid-state microwave circuits; strip line components; 125 MW; 3 percent; 53 GHz; 70 GHz; 80 MW; CW; GaAs; GaAs substrate; IMPATT diodes; Si; V-band stripline oscillators; efficiency; output power; pulsed;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
20255
Link To Document