Title :
Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors
Author :
Bielejec, E. ; Vizkelethy, G. ; Kolb, N.R. ; King, D.B. ; Doyle, B.L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions
Keywords :
bipolar transistors; elemental semiconductors; ion beam effects; semiconductor device models; silicon; Messenger-Spratt equation; Si; displacement damage equivalence; heavy ion irradiation; inverse gain degradation; light ions; neutrons; silicon bipolar junction transistors; Degradation; Equations; Gain measurement; Ion beams; Laboratories; Neutrons; Particle beams; Protons; Pulse measurements; Silicon; Damage equivalence; silicon bipolar transistor;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886231
