• DocumentCode
    870080
  • Title

    Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation

  • Author

    Castellani-Coulie, K. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.

  • Author_Institution
    Univ. de Provence, Marseille
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3265
  • Lastpage
    3270
  • Abstract
    The sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluated by 3-D simulation. An in depth investigation of main internal parameters is performed to study the electrical response of the different device architectures under irradiation. The obtained results are in agreement with the electrical behavior trends of these devices
  • Keywords
    MOSFET; ion beam effects; radiation hardening (electronics); semiconductor device models; 3D device simulation; FinFET transistor; GAA transistor; MOSFET; bipolar gain; double-gate transistor; electrical response; heavy ion irradiation; internal parameters; multigate transistors; radiation hardening; Analytical models; Electrodes; Electrostatics; FinFETs; Geometry; Impact ionization; MOSFET circuits; Radiation hardening; Semiconductor films; Silicon; Bipolar gain; FinFET transistor; GAA transistor; MOSFET; double-gate transistor;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886205
  • Filename
    4033289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870080