Radiation Hardened by Design RF Circuits Implemented in 0.13 μm CMOS Technology

Author

Chen, W. ; Pouget, V. ; Gentry, G.K. ; Barnaby, H.J. ; Vermeire, B. ; Bakkaloglu, B. ; Kiaei, S. ; Holbert, K.E. ; Fouillat, P.

Author_Institution

Arizona State Univ., Tempe, AZ

Volume

53

Issue

6

fYear

2006

Firstpage

3449

Lastpage

3454

Abstract

Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO₂). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; laser beam applications; low noise amplifiers; radiation hardening (electronics); radiofrequency amplifiers; radiofrequency oscillators; voltage-controlled oscillators; 0.13 micron; CMOS technology; MOSFET; RF building blocks; RF circuits; RHBD; annular gate transistor; circuit output spectrum; laser beam testing; laser energy; low noise amplifier; minimal degradation; radiation hardened by design; single-event transients; total ionizing dose; voltage-controlled oscillator; CMOS process; CMOS technology; Circuit noise; Circuit testing; Laser transitions; Low-noise amplifiers; Radiation hardening; Radio frequency; Radiofrequency amplifiers; Voltage-controlled oscillators; Annular gate transistor; low noise amplifier (LNA); radiation hardened by design (RHBD); single-event transients; total ionizing dose; voltage-controlled oscillators (VCO);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.885009

Filename

4033324