Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

Author

Chang, Charles E. ; Asbeck, Peter M. ; Wang, Keh-Chung ; Brown, Elliott R.

Author_Institution

Dept. of Electr. Eng., California Univ., San Diego, CA, USA

Volume

40

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

685

Lastpage

691

Abstract

A high-speed digital logic family based on heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is proposed. The negative differential resistance of RTDs is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable

Keywords

SPICE; bipolar integrated circuits; circuit analysis computing; heterojunction bipolar transistors; integrated logic circuits; resonant tunnelling devices; 0.09 mW; 150 ps; HBT; RTD; SPICE simulations; heterojunction bipolar transistors; high-speed digital logic family; low power logic; negative differential resistance; power dissipation; propagation delay time; resonant tunneling diodes; static power per gate; Bipolar transistors; CMOS logic circuits; Diodes; Heterojunction bipolar transistors; Laboratories; Logic circuits; Logic devices; Power dissipation; Resonant tunneling devices; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.202778

Filename

202778