Title :
Planar-transistor stability under X ray irradiation
Author :
Andr¿¿, B. ; Buxo, J. ; Esteve, Daniel ; Martinot, H. ; Simonne, J.
Author_Institution :
Université de Toulouse, Laboratoire de Génie Electrique Faculté des Sciences, Toulouse, France
fDate :
11/1/1966 12:00:00 AM
Abstract :
Experiments on planar transistors irradiated by X rays show drifts of variable importance, according to the type of transistor (p-n-p or n-p-n). As an interpretation of the results, surface-characteristic modification of the e-b diode due to the presence of a silicon-surface-induced charge density is proposed.
Keywords :
radiation; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660356
