• DocumentCode
    870398
  • Title

    Secondary emission properties as a function of the electron incidence angle

  • Author

    Shih, Arnold ; Hor, Charles

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    40
  • Issue
    4
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    824
  • Lastpage
    829
  • Abstract
    Computer codes being developed to improve the understanding of crossed-field amplifier (CFA) performance require a more complete and reliable database of the secondary electron emission properties of the electrode materials than exists in the literature. The authors describe an experimental method and present results of secondary emission yield measurements on molybdenum surfaces, both clean and gas-exposed. The surface cleanliness was monitored by Auger electron spectroscopy (AES), and all measurements were made under ultrahigh-vacuum conditions (better than 1×10-10 torr). The results differ from the existing data for which the surface cleanliness was not determined. The secondary electron emission yields were measured as a function of the primary electron energy and also of the angle of incidence. The results were fitted with the analytical expressions of J.R.M. Vaughan (1989), with good overall agreement if Vaughan´s formulas are slightly modified
  • Keywords
    molybdenum; secondary electron emission; 1E-10 torr; AES; Auger electron spectroscopy; CFA; Vaughan´s formulas; angle of incidence; clean Mo surface; computer codes; crossed-field amplifier; electrode materials; electron incidence angle; experimental method; gas-exposed Mo surface; measurements database; primary electron energy; secondary electron emission properties; secondary electron emission yields; secondary emission yield measurements; surface cleanliness; ultrahigh-vacuum conditions; Condition monitoring; Databases; Electrodes; Electron emission; Materials reliability; Radar; Spectroscopy; Surface cleaning; Surface contamination; Surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.202797
  • Filename
    202797