Title :
Transit-time model for short-channel MOSFET´s
Author :
Andersson, Mats ; Kuivalainen, P.
Author_Institution :
Semicond. Lab., Tech. Res. Centre of Finland, Espoo
fDate :
4/1/1993 12:00:00 AM
Abstract :
A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations
Keywords :
SPICE; insulated gate field effect transistors; semiconductor device models; MOS3; MOSFET DC model; SPICE level three model; analytical model; charge carrier saturation velocity; short channel MOSFETs; submicrometer MOS devices; transit-time model; Analytical models; Charge carriers; Electron devices; Electron emission; Equations; Integrated circuit modeling; MOS devices; MOSFET circuits; SPICE; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
