Title :
Substrate-emitter monolithic inverted transistor structure for low- power high-current-gain applications
Author :
Hruby, Ronald J. ; Dunn, William R. ; Cress, Steven B.
fDate :
6/1/1971 12:00:00 AM
Abstract :
This paper describes the development of a super-beta transistor capable of achieving current gains in excess of 1000. The basic structure (similar to collector diffused isolation) is shown, and a detailed description given, indicating the type of optimization achieved at low current levels and low saturation voltages. Cross sectional views and a photomicrograph show some of this transistor´s potential including bilateral capability.
Keywords :
Bipolar transistors; Monolithic integrated circuits; bipolar transistors; monolithic integrated circuits; Batteries; Biological materials; Biomedical telemetry; Circuits; Conductivity; Geometry; Impurities; Low voltage; Missiles; NASA;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1049665
