Total Ionizing Dose Effects on Triple-Gate FETs

Author

Gaillardin, M. ; Paillet, P. ; Ferlet-Cavrois, V. ; Faynot, O. ; Jahan, C. ; Cristoloveanu, S.

Author_Institution

IMEP-ENSERG, Grenoble

Volume

53

Issue

6

fYear

2006

Firstpage

3158

Lastpage

3165

Abstract

This paper investigates the total ionizing dose response of advanced nonplanar triple-gate transistors with short gate length, as a function of device geometry. Experiments and three-dimensional (3-D) simulations using a radiation dedicated code are used to analyze the buildup of a trapped charge in the buried oxide and its impact on the device electrical characteristics. The behaviors of three prospective nonplanar devices are detailed and compared to the total ionizing dose degradation of a planar fully depleted single-gate architecture. The Omega-gate FET is shown to be the most tolerant to a 500 krad(SiO₂) total dose exposure thanks to the efficient control provided by the lateral gates over the electrostatic potential throughout the Si film and essentially at the Si fin/BOX interface

Keywords

MOSFET; radiation hardening (electronics); silicon-on-insulator; FinFET; Omega-gate FET; SOI; buried oxide; electrical device characteristics; electrostatic potential; nonplanar devices; radiation dedicated code; silicon-on-insulator; single-gate architecture; three-dimensional simulations; total ionizing dose effects; triple-gate FET; Circuits; Degradation; Electric variables; Electrostatics; FETs; FinFETs; Fingers; Geometry; Silicon on insulator technology; Space technology; Fully depleted; multiple-gate transistors; nonplanar architectures; silicon-on-insulator (SOI); total ionizing dose tolerance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.884351

Filename

4033486