DocumentCode
870686
Title
SEUs Induced by Thermal to High-Energy Neutrons in SRAMs
Author
Granlund, Thomas ; Olsson, Nils
Author_Institution
AerotechTelub AB, Saab Avionics AB, Linkoping
Volume
53
Issue
6
fYear
2006
Firstpage
3798
Lastpage
3802
Abstract
We report on experimental SEU studies using thermal and high-energy neutrons, conducted at the TRIUMF facility, Vancouver. Different SRAM samples were used and many samples showed to be highly susceptible to thermal neutrons. Moreover, a considerable part of the total SEU-rate, at high altitudes as well as down at sea level, may be attributed to thermal neutrons for RAM based devices
Keywords
SRAM chips; neutron effects; semiconductor device reliability; semiconductor device testing; RAM based devices; SEU; SRAM; TRIUMF facility; Vancouver; high-energy neutrons; semiconductor device radiation effects; semiconductor device reliability; semiconductor device testing; semiconductor memories; thermal neutrons; Aerospace electronics; Manufacturing; Mesons; Neutrons; Particle beams; Protons; Random access memory; Shape measurement; Single event transient; Testing; Semiconductor device radiation effects; semiconductor device reliability; semiconductor device testing; semiconductor memories;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.880930
Filename
4033522
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