DocumentCode
870820
Title
Gunn-effect oscillators with vapour-grown contact layers
Author
Bass, J.C. ; Edridge, A.L. ; Knight, J.R.
Author_Institution
Plessey Co. Ltd., Allen Clark Research Centre, Towcester, UK
Volume
3
Issue
1
fYear
1967
fDate
1/1/1967 12:00:00 AM
Firstpage
24
Abstract
A vapour phase epitaxy process is described for the growth of n+ gallium arsenide contact layers for Gunn-effect oscillators. X band oscillators incorporating these contacts have so far produced 30mW continuous power and efficiencies of 1.6%.
Keywords
Gunn effect; III-V semiconductors; crystal growth; films; gallium arsenide; production; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670019
Filename
4207083
Link To Document