Title :
Impact evaluation of the SOA spontaneous emission in ultrafast all-optical processing schemes
Author :
Bogoni, A. ; Bizzi, A. ; Potì, L. ; Ghelfi, P.
Author_Institution :
Laboratorio Nazionale di Reti Fotoniche, CNIT, Pisa, Italy
Abstract :
In ultrafast all-optical signal processing schemes based on nonlinear effects in SOAs, the impact of the device spontaneous emission noise is not negligible. Therefore a numerical extended model is developed in order to predict SOA noise behaviour. The proposed tool takes into account all the gain recovery dynamics, the current-induced gain saturation, and the gain spectrum dependence on the injected current. The noise spectrum at the output of the device is investigated as a function of the injected current and of the input power, and the numerical results are experimentally validated. The importance of the ASE introduction in the numerical analysis of the SOA-based schemes for ultrafast all-optical processing is demonstrated studying two particular applications. In particular, the effects of high detuning FWM and of XGM are analysed in the presence and absence of ASE noise.
Keywords :
high-speed optical techniques; multiwave mixing; numerical analysis; optical noise; semiconductor device models; semiconductor device testing; semiconductor optical amplifiers; spontaneous emission; ASE introduction; FWM; SOA noise behaviour; SOA nonlinear effects; SOA spontaneous emission; SOA-based schemes; XGM; cross-gain modulation; current-induced gain saturation; four-wave mixing; gain recovery dynamics; gain spectrum injected current dependence; injected current; input power; numerical analysis; numerical extended model; output noise spectrum; spontaneous emission noise; ultrafast all-optical signal processing;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20031126