Time-Domain Component Analysis of Heavy-Ion-Induced Transient Currents in Fully-Depleted SOI MOSFETs

Author

Kobayashi, Daisuke ; Aimi, Masahiro ; Saito, Hirobumi ; Hirose, Kazuyuki

Author_Institution

Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Kanagawa

Volume

53

Issue

6

fYear

2006

Firstpage

3372

Lastpage

3378

Abstract

Current components of heavy-ion-induced transient currents in a 0.2-mum fully-depleted SOI MOSFET are analyzed in the time domain. The analysis demonstrates that the transient currents have another slow-decay current component that is different from the two conventional current components: a prompt discharge current and a slow-decay parasitic bipolar current. The slow-decay component revealed here is a flow of deposited carriers stored in the body region to maintain quasi-neutrality, and it drastically widens the transient pulse

Keywords

MOSFET; bipolar transistors; ion beam effects; silicon-on-insulator; time-domain analysis; transients; discharge current; fully-depleted SOI MOSFETs; heavy-ion-induced transient currents; parasitic bipolar transistor; single event transients; slow-decay current component; slow-decay parasitic bipolar current; time-domain component analysis; transient pulse; Analytical models; Circuits; Clocks; Electrons; Frequency; MOSFETs; Silicon on insulator technology; Time domain analysis; Transient analysis; Very large scale integration; Heavy ions; parasitic bipolar transistor; silicon on insulator (SOI) technology; single event transients; time domain analysis; transient currents;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.886234

Filename

4033601