Title :
Time-Domain Component Analysis of Heavy-Ion-Induced Transient Currents in Fully-Depleted SOI MOSFETs
Author :
Kobayashi, Daisuke ; Aimi, Masahiro ; Saito, Hirobumi ; Hirose, Kazuyuki
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Kanagawa
Abstract :
Current components of heavy-ion-induced transient currents in a 0.2-mum fully-depleted SOI MOSFET are analyzed in the time domain. The analysis demonstrates that the transient currents have another slow-decay current component that is different from the two conventional current components: a prompt discharge current and a slow-decay parasitic bipolar current. The slow-decay component revealed here is a flow of deposited carriers stored in the body region to maintain quasi-neutrality, and it drastically widens the transient pulse
Keywords :
MOSFET; bipolar transistors; ion beam effects; silicon-on-insulator; time-domain analysis; transients; discharge current; fully-depleted SOI MOSFETs; heavy-ion-induced transient currents; parasitic bipolar transistor; single event transients; slow-decay current component; slow-decay parasitic bipolar current; time-domain component analysis; transient pulse; Analytical models; Circuits; Clocks; Electrons; Frequency; MOSFETs; Silicon on insulator technology; Time domain analysis; Transient analysis; Very large scale integration; Heavy ions; parasitic bipolar transistor; silicon on insulator (SOI) technology; single event transients; time domain analysis; transient currents;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886234
