• DocumentCode
    870940
  • Title

    Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

  • Author

    Kuboyama, Satoshi ; Kamezawa, Chihiro ; Ikeda, Naomi ; Hirao, Toshio ; Ohyama, Hidenori

  • Author_Institution
    Japan Aerosp. Exploration Agency, Tsukuba
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3343
  • Lastpage
    3348
  • Abstract
    It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation
  • Keywords
    Schottky diodes; radiation effects; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; Silicon Carbide Schottky Barrier Diodes; charge collection; device simulation; heavy ion irradiation; permanent damage; single-event burnout; Leakage current; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor device measurement; Semiconductor diodes; Semiconductor materials; Silicon carbide; Vehicles; Voltage; Heavy ion; Schottky barrier diode; silicon carbide; single-event burnout;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.885165
  • Filename
    4033613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870940