Title :
Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout
Author :
Kuboyama, Satoshi ; Kamezawa, Chihiro ; Ikeda, Naomi ; Hirao, Toshio ; Ohyama, Hidenori
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba
Abstract :
It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation
Keywords :
Schottky diodes; radiation effects; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; Silicon Carbide Schottky Barrier Diodes; charge collection; device simulation; heavy ion irradiation; permanent damage; single-event burnout; Leakage current; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor device measurement; Semiconductor diodes; Semiconductor materials; Silicon carbide; Vehicles; Voltage; Heavy ion; Schottky barrier diode; silicon carbide; single-event burnout;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885165
