DocumentCode :
870999
Title :
SEL Induced Latent Damage, Testing, and Evaluation
Author :
Layton, Phil ; Kniffin, Scott ; Guertin, Steven ; Swift, Gary ; Buchner, Stephen
Author_Institution :
Maxwell Technol. Inc, San Diego, CA
Volume :
53
Issue :
6
fYear :
2006
Firstpage :
3153
Lastpage :
3157
Abstract :
We describe a methodology for evaluating and screening SEL susceptible devices for latent damage. Experimental data and modeling are presented to demonstrate the approach on actual devices
Keywords :
DRAM chips; integrated circuit modelling; integrated circuit testing; radiation effects; SDRAM; Single Event Latchup induced latent damage; Single Event Latchup testing; potential failure mode; screening SEL susceptible devices; Laboratories; Laser theory; Life testing; NASA; Performance evaluation; Production; Propulsion; SDRAM; Space technology; Temperature; Characterization; SEL; latent damage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.886235
Filename :
4033637
Link To Document :
بازگشت