• DocumentCode
    870999
  • Title

    SEL Induced Latent Damage, Testing, and Evaluation

  • Author

    Layton, Phil ; Kniffin, Scott ; Guertin, Steven ; Swift, Gary ; Buchner, Stephen

  • Author_Institution
    Maxwell Technol. Inc, San Diego, CA
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3153
  • Lastpage
    3157
  • Abstract
    We describe a methodology for evaluating and screening SEL susceptible devices for latent damage. Experimental data and modeling are presented to demonstrate the approach on actual devices
  • Keywords
    DRAM chips; integrated circuit modelling; integrated circuit testing; radiation effects; SDRAM; Single Event Latchup induced latent damage; Single Event Latchup testing; potential failure mode; screening SEL susceptible devices; Laboratories; Laser theory; Life testing; NASA; Performance evaluation; Production; Propulsion; SDRAM; Space technology; Temperature; Characterization; SEL; latent damage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886235
  • Filename
    4033637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870999