Title :
Limiting Upset Cross Sections of SEU Hardened SOI SRAMs
Author :
Liu, Michael S. ; Liu, Harry Y. ; Brewster, Nancy ; Nelson, Dave ; Golke, Keith W. ; Kirchner, Gary ; Hughes, Harold L. ; Campbell, Arthur ; Ziegler, James F.
Author_Institution :
Honeywell Defense & Space Electron. Syst., Plymouth, MN
Abstract :
This paper discusses the practical limits of proton and heavy ion induced single event upset cross sections in SEU hardened deep submicron SOI SRAMs. Non-conventional "double-hit" mechanisms are hypothesized to explain test results
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit design; integrated circuit modelling; proton effects; radiation hardening (electronics); silicon-on-insulator; SEU hardened SOI CMOS SRAMs; heavy ion radiation; proton radiation; single event upset cross sections; Capacitors; DH-HEMTs; Delay effects; Feedback; Laboratories; Protons; Random access memory; Resistors; Single event upset; Testing; SEU; SOI; SRAM; upset mechanism;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886216
