DocumentCode :
871177
Title :
Semianalytical Modeling of Short-Channel Effects in Lightly Doped Silicon Trigate MOSFETs
Author :
Tsormpatzoglou, Andreas ; Dimitriadis, Charalabos A. ; Clerc, Raphaël ; Pananakakis, G. ; Ghibaudo, Gérard
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki
Volume :
55
Issue :
10
fYear :
2008
Firstpage :
2623
Lastpage :
2631
Abstract :
A simple analytical expression of the 3-D potential distribution along the channel of lightly doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted approach of symmetric and asymmetric double-gate MOSFETs. The analytical solution is compared with the numerical solution of the 3-D Poisson´s equation in the cases where the ratios of channel length/silicon thickness and channel length/channel width are ges 2. Good agreement is achieved at different positions within the channel. The perimeter-weighted approach fails at the corner regions of the silicon body; however, by using corner rounding and undoped channel to avoid corner effects in simulations, the agreement between model and simulation results is improved. By using the extra potential induced in the silicon film due to short-channel effects, the subthreshold drain current is determined in a semianalytical way, from which the subthreshold slope, the drain-induced barrier lowering, and the threshold voltage are extracted.
Keywords :
MOSFET; Poisson equation; feature extraction; semiconductor device models; 3D Poisson equation; 3D potential distribution; Si; channel length-channel width; lightly doped silicon trigate MOSFET; perimeter-weighted approach; semianalytical modeling; short-channel effects; subthreshold drain current; threshold voltage; Degradation; FinFETs; Immune system; MOSFETs; Poisson equations; Semiconductor films; Silicon; Subthreshold current; Threshold voltage; Ultra large scale integration; Analytical potential distribution; corner effect; short-channel effects (SCEs); silicon trigate (TG) MOSFETs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2003096
Filename :
4631382
Link To Document :
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