Title :
Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation
Author :
Munteanu, D. ; Ferlet-Cavrois, V. ; Autran, J.L. ; Paillet, P. ; Baggio, J. ; Faynot, O. ; Jahan, C. ; Tosti, L.
Author_Institution :
L2MP-CNRS, Marseille
Abstract :
The response to single-event transient of decananometer SOI MOSFETs is investigated by heavy ion experiment and by 3D quantum simulation. The 50 nm FD Single-Gate SOI devices have been irradiated with heavy ions at GANIL (Caen, France) using a new experimental setup. Three-dimensional numerical simulation is used to get further insights and to extrapolate the experimental results when devices are scaled down. For ultra-thin films new phenomena such as quantum-mechanical confinement have to be carefully considered in the device simulation. These effects are found to have an increasing impact on the operation of future ultra-thin single- and double-gate devices submitted to heavy ion irradiation
Keywords :
MOSFET; ion beam effects; semiconductor device models; semiconductor thin films; silicon-on-insulator; 3D quantum simulation; GANIL; decananometer SOI MOSFETs; device simulation; fully depleted Single-Gate SOI devices; heavy ion experiment; heavy ion irradiation; quantum-mechanical confinement; single-event transient; three-dimensional numerical simulation; ultra-thin body double-gate device; ultra-thin body single-gate device; Carrier confinement; Electrons; Geometry; MOSFETs; Numerical simulation; Potential well; Quantization; Semiconductor films; Silicon on insulator technology; Thickness measurement; 3D quantum simulation; Double-gate MOSFET; fully-depleted single-gate silicon-on-insulator (SOI) MOSFET; heavy-ion experiment; quantum-mechanical effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886206
