Title :
The Mechanisms of Small Instabilities in Irradiated MOS Transistors
Author :
Holmes-Siedle, Andrew ; Adams, Leonard
Author_Institution :
Fulmer Research Laboratories Stoke Poges, Slough, SL2 4QD, England
Abstract :
When a metal-oxide semiconductor (MOS) device is irradiated, charge builds up in the oxide and new interface states are also created. The charge and discharge of "slow interface states" cause the flat-band and threshold voltage of a device held under bias to drift with time. The effect is distinctfrom ionic instabilities. Even small radiation-induced drift effects may be of importance in precision devices such as MOS comparators and regulators. Some recent data arising from experiments on precision MOS devices, - mainly using gamma irradiation are presented and methods of minimising radiation-induced slow drift effects are discussed.
Keywords :
Circuits; Electrons; Interface states; Laboratories; MOS devices; MOSFETs; Regulators; Silicon; Space charge; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333096