DocumentCode
871348
Title
Quantifying the Double-Sided Neutron SEU Threat, From Low Energy (Thermal) and High Energy ( > 10 MeV) Neutrons
Author
Normand, E. ; Vranish, K. ; Sheets, A. ; Stitt, M. ; Kim, R.
Author_Institution
Boeing Radiat. Effects Lab., Seattle, WA
Volume
53
Issue
6
fYear
2006
Firstpage
3587
Lastpage
3595
Abstract
We quantify the SEU rate induced by neutrons in current devices, from both low energy (thermal) and high energy neutrons. New measured SEU cross sections from both kinds of neutrons in SRAMs, DRAMs and microprocessors are included
Keywords
DRAM chips; SRAM chips; neutron effects; semiconductor devices; BPSG; DRAMs; SRAMs; atmospheric neutron flux; double-sided neutron SEU; high energy neutrons; microprocessors; single event upset; thermal neutrons; Aerospace electronics; Aerospace industry; Manufacturing industries; Microprocessors; NIST; Neutrons; Particle beams; Random access memory; Single event upset; Testing; Atmospheric neutron flux; BPSG; avionics SEU; neutron SEU; thermal neutrons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.886209
Filename
4033762
Link To Document