Title :
Technology Circuit Co-Design for Ultra Fast InSb Quantum Well Transistors
Author :
Kulkarni, Jaydeep P. ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Indium antimonide (InSb)-based quantum-well field- effect transistors (QWFETs) are conceived as a promising candidate for low-voltage high-performance applications. In this paper, we show complete technology-circuit assessment of InSb-based QWFETs. The codesign approach spans from the device/SPICE models, logic/memory circuit analysis, to technology requirements. We show the feasibility of the use of Si+InSb hybrid technology for future high-speed low-voltage applications. We prescribe the technology requirements as well as suggest the application space for InSb transistors.
Keywords :
field effect transistors; indium compounds; network synthesis; quantum well devices; InSb; device-SPICE models; field effect transistors; logic-memory circuit analysis; low-voltage high-performance applications; technology circuit codesign; ultra fast quantum well transistors; Circuit analysis; Dynamic voltage scaling; Electron mobility; FETs; Logic circuits; Logic devices; Quantum well devices; SPICE; Semiconductor materials; Space technology; Compound semiconductor; indium antimonide (InSb); low-voltage applications; quantum-well field-effect transistors (QWFETs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2003030