Title :
High-Frequency Noise Performance of 60-nm Gate-Length FinFETs
Author :
Raskin, Jean-Pierre ; Pailloncy, Guillaume ; Lederer, Dimitri ; Danneville, François ; Dambrine, Gilles ; Decoutere, Stefaan ; Mercha, Abdelkarim ; Parvais, Bertrand
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of FinFETs is reported. The impact of the geometrical dimensions of FinFETs on RF noise parameters such as the channel length, the fin width, as well as the fin number is analyzed. A minimum noise figure of 1.35 dB is obtained with an associated available gain of 13.5 dB at 10 GHz for Vdd = 0.5 V. This result is quite encouraging to bring solutions for future low-power RF systems.
Keywords :
MOSFET; low-power electronics; microwave transistors; nanoelectronics; semiconductor device noise; FinFET; RF noise parameters; channel length; fin number; fin width; frequency 10 GHz; gain 13.5 dB; geometrical dimension; high-frequency noise performance; low-power RF systems; noise figure 1.35 dB; radiofrequency noise; size 60 nm; voltage 0.5 V; CMOS technology; Circuit noise; FinFETs; Implants; MOSFETs; Radio frequency; Semiconductor device noise; Silicidation; Threshold voltage; Transconductance; $S$ -parameters; FinFETs; high-frequency noise; microwave characterization; small-signal modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2003097
