$\hbox {HfO}_{2}$ Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation

The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO₂ MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained.