• DocumentCode
    871406
  • Title

    Note on the relationship between the domain-transit frequency and the cavity-controlled frequency of thin Gunn devices

  • Author

    Hobson, G.S.

  • Author_Institution
    Royal Radar Establishment, Malvern, UK
  • Volume
    3
  • Issue
    3
  • fYear
    1967
  • fDate
    3/1/1967 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    Some measurements on thin Gunn devices mounted in cavities covering the range 7¿20GHz are reported. For any particular device, it has been found that VBf is approximately constant, where VB is the bias voltage which gives maximum r.f. output at the frequency f. This observation has been related to the domain-transit frequency.
  • Keywords
    Gunn effect; oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19670085
  • Filename
    4207146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871406