Hole and electron concentrations in a p-n-abrupt-junction diode as obtained by exact computer solution of the differential equations

A computer solution for the current, continuity and Poisson´s differential equations has been obtained for the forward steady-state behaviour of a 1-dimensional abrupt-p+-n-junction germanium diode at zero and at low to high injection levels at 300° K. The numerical integration has been performed inside and outside the space-charge layer of the p-n junction by using the Hall-Shockley-Read and the Auger recombination processes and by eliminating the Boltzmann equilibrium approximation in the space-charge layer and the space-charge neutrality approximation in the quasineutral p and nregion. The numerical results for the hole-and electron-concentration distributions are reported.