• DocumentCode
    871457
  • Title

    Transient Radiation Effects at X-Band in GaAs FETs and ICs

  • Author

    Anderson, W.T., Jr. ; Binari, S.C.

  • Author_Institution
    Naval Research Laboratory, Washington, D. C. 20375
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4205
  • Lastpage
    4208
  • Abstract
    Transient radiation effects following 20-60 ns electron pulses were measured in GaAs FETs and ICs operating at X-band. Long-term transients in RF output power and drain current were observed in all devices and ICs except FETs fabricated with a buried p-layer. Only the prompt (20 ns) photocurrent response was observed in FETs with a buried p-layer. The long-term transients are explained by a model of substrate trapping and backgating.
  • Keywords
    Electrons; FETs; Gallium arsenide; Integrated circuit noise; Intrusion detection; Ionizing radiation; Linear particle accelerator; Logic; Pulse measurements; Radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333109
  • Filename
    4333109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871457