• DocumentCode
    871486
  • Title

    A Radiation-Hardened 16K-BIT MNOS EAROM

  • Author

    Knoll, M.G. ; Dellin, T.A. ; Jones, R.V.

  • Author_Institution
    Sandia National Laboratories Albuquerque, New Mexico 87185
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4224
  • Lastpage
    4228
  • Abstract
    A radiation-hardened silicon-gate CMOS/NMNOS 16K-bit EAROM has been designed, fabricated, and evaluated. This memory has been designed to be used as a ROM replacement in radiation-hardened microprocessor-based systems.
  • Keywords
    CMOS memory circuits; CMOS technology; EPROM; Electron traps; Laboratories; Read only memory; Registers; Silicon; TV; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333112
  • Filename
    4333112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871486