• DocumentCode
    871500
  • Title

    Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor Family

  • Author

    Kim, W.S. ; Mnich, T.M. ; Corbett, W.T. ; Treece, R.K. ; Giddings, A.E. ; Jorgensen, J.L.

  • Author_Institution
    Sandia National Laboratories Division 2115 P. O. Box 5800 Albuquerque, New Mexico 87185
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4229
  • Lastpage
    4234
  • Abstract
    A microprocessor family has been designed in radiation-hardened bulk, silicongate CMOS. The three main family members are logic emulations of Intel NMOS devices: SA3000, a general-purpose 8-bit central processing unit (CPU) (Intel 8085A); SA3001, a 256 × 8-bit static RAM with two 8-bit I/O ports, one 6-bit I/O port and a timer (Intel 8155/56); SA3002, a 2K × 8-bit ROM with two 8-bit I/O ports (Intel 8355). This paper describes the design principles and methodology used to realize fully static, fully complementary CMOS devices capable of withstanding more than one megarad total dose. These designs are latchup-free and are built on epitaxial substrates using a 3-micron gate length technology. In order to achieve this level of radiation tolerance, the radiation characteristics of the process must be measured and the radiation effects accommodated in all phases of the design.
  • Keywords
    CMOS logic circuits; CMOS technology; Central Processing Unit; Design methodology; Emulation; Logic devices; MOS devices; Microprocessors; Read only memory; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333113
  • Filename
    4333113