DocumentCode
871527
Title
A Radiation-Hardened CMOS 8-Bit Analog-to-Digital Converter
Author
Broell, Fred G. ; Barnard, Wilson J.
Author_Institution
Sandia National Laboratories, Albuquerque, NM 87185
Volume
30
Issue
6
fYear
1983
Firstpage
4246
Lastpage
4250
Abstract
The increasing use of LSI circuits in advanced systems has required the incorporation of linear (analog) functions into digital Bulk CMOS LSI devices. This design required a radiation-hardened 8-bit successive approximation analog-to-digital converter (ADC) which would be implemented as a macrocell of a 24-channel data acquisition system on a single LSI circuit. The ADC and two operational amplifiers were first fabricated on a small chip for characterization testing. These parts were packaged and the characterization tests were successful, indicating better than 8-bit accuracy. Of these parts, six were irradiated at 2 Ã 106 rads (Si) per hour, each with different bias conditions. All but one of the parts were functional after 5 Ã 105 rads (Si) total dose and all but two were still accurate to 7-bit accuracy after 1 Ã 106 rads (Si). The one unit which failed was a gross linearity failure; the test results plus the bias conditions indicate that the offset cancellation switch became leaky, causing the failure. This portion of the circuit has been redesigned to eliminate the problem, and future tests are pending.
Keywords
Analog-digital conversion; CMOS analog integrated circuits; CMOS digital integrated circuits; Circuit testing; Data acquisition; Large scale integration; Macrocell networks; Operational amplifiers; Packaging; Switches;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4333116
Filename
4333116
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