Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

Author

Sonia, G. ; Brunner, F. ; Denker, A. ; Lossy, R. ; Mai, M. ; Opitz-Coutureau, J. ; Pensl, G. ; Richter, E. ; Schmidt, J. ; Zeimer, U. ; Wang, L. ; Weyers, M. ; Wurfl, Joachim ; Trankle, Gunther

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin

Volume

53

Issue

6

fYear

2006

Firstpage

3661

Lastpage

3666

Abstract

Operation of AlGaN/GaN HFETs in space was simulated by irradiation with protons and heavy ions at 68 MeV and 2MeV and fluences up to 10¹³ cm^-2. Before and after irradiation dc and pulsed I-V characteristics of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by photoluminescence, X-ray diffraction and Hall measurements before and after irradiation. The results of the material characterization correlate with the device results. High energy (68 MeV) irradiation has no impact on device performance while high fluences at lower energy (2 MeV) result in degradation

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; aluminium compounds; gallium compounds; high electron mobility transistors; photoluminescence; proton effects; wide band gap semiconductors; 2 MeV; 68 MeV; AlGaN-GaN; HFET devices; Hall measurements; X-ray diffraction; heavy ion irradiation effects; material characterization; photoluminescence; proton irradiation effects; pulsed I-V characteristics; thick semiconductor reference layer; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; MODFETs; Photoluminescence; Protons; Pulse measurements; Thickness measurement; X-ray diffraction; Heavy ions; modulation-doped field effect transistors (MODFETs); photoluminescence; protons; radiation effects; x-ray measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.885006

Filename

4033885