• DocumentCode
    871576
  • Title

    Two Radiation-Hardened Analog Multiplexers

  • Author

    Williams, D.R. ; van Vonno, N.W.

  • Author_Institution
    Custom Integrated Circuits Division Harris Semiconductor Melbourne, FL 32901
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4273
  • Lastpage
    4276
  • Abstract
    A total dose radiation-resistant, high voltage CMOS process has been used to build both eight-and sixteen-channel analog multiplexers. The circuits are hardened versions of the Harris 508A and 1840 dielectrically isolated multiplexers, and meet all specifications of their non-hardened equivalents after total dose exposures of 100k and 200k rad(Si), respectively. The process, which yields circuits functional to a dose level of a megarad, is described. Circuit performance as a function of total dose is presented.
  • Keywords
    Breakdown voltage; CMOS process; Dielectrics; Digital circuits; Electric breakdown; Multiplexing; Operational amplifiers; Oxidation; Surges; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333121
  • Filename
    4333121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=871576